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Prozessfähigkeiten & Dienstleistungen

Die nachstehende Tabelle fasst die hauptsächlichen Prozessfähigkeiten für die Fabrikation zusammen, die den Kunden für die Photolithographie, das Ätzen, die Abscheidung und Oxidation, Verklebung und Glasverpackung.

 

Main Technology Process Process Specification Notes Wafer Size
Si Deep Etching Deep RIE Minimum Line/Space: 1.5µm
Hole diameter: ф 10µm
Maxiumum aspect ration: 100
Wafer through-hole available
*8 inch wafer available
4 Inch
5 Inch
6 Inch
Glass Fabrication Blast Minimum Line/Space: 15µm
Hole diameter/ich: 50µm
 
Glass Etching Minimum Line/Space: 10µm
Maxiumum depth: 300µm
 
Deposition Sputtering In-plane film thickness uniformity: <5%
Film thickness range: 10nm-2µm
 
Evaporation In-plane film thickness uniformity: <5%
Maxiumum film thickness: 2µm
 
Bonding Anodic Bonding (Si/Glass) Sealed Pressure: >0.01Pa Fusion Bonding
Adhesion bonding available
Oxidation, Diffusion Oxidation In-plane film thickness uniformity: <10%
Maxiumum film thickness: 1µm
Dry, wet
Anneal    
Photolithography Resist coating Positiv Resist
In-plane film thickness: <5%
Maxiumum film thickness: 10µm
Mirror Projection Exposure
Lithographic exposure Minimum Line/Space: 1.5µm Contact/Proximity Exposure
Image development   Organic & Inorganic Alkali
Dry film Minimum Line/Space: 3µm
Bilateral Alignment available
 
Etching Wet etching
Plasma etching
Au, AI, Ti, Cr, (etc.)  
Inspection XRF
EDX
Zygo
SEM
   

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