The table below summarises the main fabrication process capabilities available to customers for photolithography, etching, deposition and oxidation, bonding and glass packaging. A PDF version of this matrix is available for download here and from our Downloads Library. We also offer our Foundry Design Rules as a downloadable document here and in our download library.
Process | Specification | Notes | Availability by Wafer Size (фmm) | ||||
---|---|---|---|---|---|---|---|
100 | 125 | 150 | 200 | ||||
Photolithography | Resist Coat | Thickness: 10.0µm (max) Uniformity: +/-5% |
Also available: Spray Coat to a substrate having a step | Y | Y | Y | Y |
Exposure Mirror Projection Aligner | Line/Space: 1.5µm (min) | Y | Y | Y | N | ||
Contact Aligner | Line/Space: 3.0µm (min) | Also available - top and bottom side alignment of the wafer | Y | Y | Y | Y | |
Stepper | Line/Space: 1.0µm (min) | N | Y | Y | Y | ||
Develop | Photolithography development service available | Y | Y | Y | Y | ||
Etching | Si Deep Etch | Line/Space: 1.0µm (min) | Y | Y | Y | Y | |
Hole diameter: ф2.0µm (min) | |||||||
Aspect Ratio: 1:100 (max) | |||||||
Dry Etch | Line/Space: 3.0µm (min) | Metal, PZT, Resist | Y | Y | Y | Y | |
Vapor HF | Line/Space: 1.0µm (min) | Y | Y | Y | Y | ||
Wet Etch | Au, Al, Ti, Cr, etc | Y | Y | Y | Y | ||
Thin Film Deposition | PZT Sputter | Relative Permittivity (εr): 900 | Y | Y | Y | Y | |
Piezoelectric Constant (d31): 220pm/V | |||||||
Metal Sputter | Thickness: 10.0nm ~ 2.0µm Uniformity: +/- 10% |
Au, Pt, Al, Ti, Cr, etc | Y | Y | Y | Y | |
SiO2 Sputter | Thickness: 2.0µm (max) Uniformity: +/- 10% |
Y | Y | Y | Y | ||
Plasma Deposition | PE-CVD SiO2 (TEOS) | Thickness: 10.0nm ~ 5.0µm Uniformity: +/- 5% |
Y | Y | Y | Y | |
PE-CVN SiN | Thickness: 10.0nm ~ 5.0µm Uniformity: +/- 5% |
Stress can be controlled | Y | Y | Y | Y | |
Furnace | Thermal Oxidation | Wet/dry mixed | Y | Y | Y | Y | |
Annealing | Y | Y | Y | Y | |||
Wafer Bonding | Anodic bonding | Available Vacuum Control: >0.01Pa | Y | Y | Y | N | |
Glass Process | Sand Blast | Line/Space: 15.0µm (min) | Y | Y | Y | N | |
Hole diameter: ф50.0µm | |||||||
Wet Etch | Line/Space: 10.0µm (min) | Y | Y | Y | N | ||
Depth: 300µm (max) | |||||||
Back End | Automated Dicing | Y | Y | Y | Y | ||
Back Grinding | N | Y | Y | Y | |||
Metrology | SEM | Y | Y | Y | Y | ||
Inspection Microscope | |||||||
Surface Profiler | |||||||
Sheet Resistance (4-Point Probe) | |||||||
CNC Vision Measuring System | |||||||
Zygo | |||||||
XRF | |||||||
EDX | |||||||
Laser Microscope |