Glass Interposer (GIP)

Silicon Sensing’s glass interposer process (GIP) offers high reliability derived from the wafer level packaging process gained through mass production of its CRG20 Capacitive MEMS Gyro (VSG4), plus a low-cost glass blasting process compared to a conventional Through-Silicon Via (TSV) process.

 

Structure of the CRG20

Glass Interposer Specification

Comparison between TSV and GIP

TSV Process		Glass Interposer Process
1. Silicon deep RIE process		1. Surface glass blast process
2. Insulate wafer (Heat oxidation or CVD)		2. Back surface glass blast process
3. Seed layer formed (Sputtering)		3. Surface electrode fomed
4. Metal Plating		4. Back surface electrode formed
5.Chemical Mechanical Polishing		5. Electrode patterning (Wet etching)
6. Surface electrode formed
7. Surface electrode patterning (Etching)
8. Back surface electrode formed
9. Back surface electrode patterning (Etching)